Implantable multichannel electrode array based on SOI technologyCHEUNG, Karen C; DJUPSUND, Kaj; DAN, Yang et al.Journal of microelectromechanical systems. 2003, Vol 12, Num 2, pp 179-184, issn 1057-7157, 6 p.Article

Self-aligned vertical electrostatic combdrives for micromirror actuationKRISHNAMOORTHY, Uma; LEE, Daesung; SOLGAARD, Olav et al.Journal of microelectromechanical systems. 2003, Vol 12, Num 4, pp 458-464, issn 1057-7157, 7 p.Article

Low resistivity SOI for substrate crosstalk reductionANKARCRONA, J; VESTLING, L; EKLUND, K.-H et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 8, pp 1920-1922, issn 0018-9383, 3 p.Article

Optimisation of trench isolated bipolar transistors on SOI substrates by 3D electro-thermal simulationsNIGRIN, S; ARMSTRONG, G. A; KRANTI, A et al.Solid-state electronics. 2007, Vol 51, Num 9, pp 1221-1228, issn 0038-1101, 8 p.Article

Investigation of a new modified source/drain for diminished self-heating effects in nanoscale MOSFETs using computer simulationJAGADESH KUMAR, M; OROUJI, Ali A.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 33, Num 1, pp 134-138, issn 1386-9477, 5 p.Article

Integration of diamond in fully-depleted silicon-on-insulator technology as buried insulator : A theoretical analysisMAZELLIER, Jean-Paul; FAYNOT, Olivier; CRISTOLOVEANU, Sorin et al.Diamond and related materials. 2008, Vol 17, Num 7-10, pp 1248-1251, issn 0925-9635, 4 p.Conference Paper

Design, fabrication, and control of components in MEMS-based optical pickupsCHIU, Yi; CHIOU, Jin-Chem; FANG, Weileun et al.IEEE transactions on magnetics. 2007, Vol 43, Num 2, pp 780-784, issn 0018-9464, 5 p., 2Conference Paper

Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuationsRAN YAN; LYNCH, Danny; CAYRON, Thibault et al.Solid-state electronics. 2008, Vol 52, Num 12, pp 1872-1876, issn 0038-1101, 5 p.Conference Paper

Reduction of sidewall roughness in silicon-on-insulator rib waveguidesGAO, F; WANG, Y; CAO, G et al.Applied surface science. 2006, Vol 252, Num 14, pp 5071-5075, issn 0169-4332, 5 p.Article

Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETsNA, K.-I; CRISTOLOVEANU, S; BAE, Y.-H et al.Solid-state electronics. 2009, Vol 53, Num 2, pp 150-153, issn 0038-1101, 4 p.Article

Characterization of GaN layers grown on silicon-on-insulator substratesTRIPATHY, S; WANG, L. S; CHUA, S. J et al.Applied surface science. 2006, Vol 253, Num 1, pp 236-240, issn 0169-4332, 5 p.Conference Paper

Process Control of Cantilever Deflection for Sensor Application Based on Optical WaveguidesFEI JIANG; KEATING, Adrian; MARTYNIUK, Mariusz et al.Journal of microelectromechanical systems. 2013, Vol 22, Num 3, pp 569-579, issn 1057-7157, 11 p.Article

External Stresses on Tensile and Compressive Contact Etching Stop Layer SOI MOSFETsCHANG, Wen-Teng; WANG, Chih-Chung; LIN, Jian-An et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 8, pp 1889-1894, issn 0018-9383, 6 p.Article

Drive Current Enhancement in Silicon-on-Quartz MOSFETsNAKAJIMA, Yoshikata; SASAKI, Kenji; HANAJIRI, Tatsuro et al.IEEE electron device letters. 2008, Vol 29, Num 8, pp 944-945, issn 0741-3106, 2 p.Article

Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO₂ high-k gate dielectric considering vertical and fringing displacement effects using 2-D simulationLIN, Yu-Sheng; LIN, Chia-Hong; KUO, James B et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 6, pp 1373-1378, issn 0018-9383, 6 p.Article

On negative differential resistance in hydrodynamic simulation of partially depleted SOI transistorsPOLSKY, Boris; PENZIN, Oleg; EL SAYED, Karim et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 4, pp 500-506, issn 0018-9383, 7 p.Article

Integrity of functional self-assembled monolayers on hydrogen-terminated silicon-on-insulator wafersFANGYUAN TIAN; CHAOYING NI; TEPLYAKOV, Andrew V et al.Applied surface science. 2010, Vol 257, Num 4, pp 1314-1318, issn 0169-4332, 5 p.Article

A photonic wire-based directional coupler based on SOIQUAN, Yu-Jun; HAN, Pei-De; RAN, Qi-Jiang et al.Optics communications. 2008, Vol 281, Num 11, pp 3105-3110, issn 0030-4018, 6 p.Article

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator applicationMING ZHU; PENG CHEN; FU, Ricky K. Y et al.Applied surface science. 2005, Vol 239, Num 3-4, pp 327-334, issn 0169-4332, 8 p.Article

Synthesis of buried insulating layers in silicon by ion implantationIBRAHIM, A. M; BEREZIN, A. A.Materials chemistry and physics. 1992, Vol 31, Num 4, pp 285-300, issn 0254-0584Article

A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel OrientationsSILVESTRI, Luca; REGGIANI, Susanna; GNANI, Elena et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 12, pp 3287-3294, issn 0018-9383, 8 p.Article

Effective Mass Anomalies in Strained-Si Thin Films and CrystalsYAMAUCHI, Jun.IEEE electron device letters. 2008, Vol 29, Num 2, pp 186-188, issn 0741-3106, 3 p.Article

Threshold Voltage Model of Short-Channel FD-SOI MOSFETs With Vertical Gaussian ProfileGUOHE ZHANG; ZHIBIAO SHAO; KAI ZHOU et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 3, pp 803-809, issn 0018-9383, 7 p.Article

Impact of parameter variations and random dopant fluctuations on short-channel fully depleted SOI MOSFETs with extremely thin BOXOHTOU, Tetsu; SUGII, Nobuyuki; HIRAMOTO, Toshiro et al.IEEE electron device letters. 2007, Vol 28, Num 8, pp 740-742, issn 0741-3106, 3 p.Article

On the origin of the excess low-frequency noise in graded-channel silicon-on-insulator nMOSFETsSIMOEN, Eddy; CLAEYS, C; CHUNG, T. M et al.IEEE electron device letters. 2007, Vol 28, Num 10, pp 919-921, issn 0741-3106, 3 p.Article